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filingDate 2019-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6826d0072add31af033b06fe021a314
publicationDate 2021-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10903624-B2
titleOfInvention Semiconductor laser element
abstract A semiconductor laser element includes a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type; and an active region disposed between the first nitride semiconductor layer and the second nitride semiconductor layer. The active region includes a first barrier layer, an intermediate layer, a well layer and a second barrier layer. A lattice constant of the intermediate layer is greater than a lattice constant of each of the first barrier layer and the second barrier layer, and smaller than a lattice constant of the well layer. A thickness of the intermediate layer is greater than a thickness of the well layer. The well layer and the second barrier layer are in contact with each other, or a distance between the well layer and the second barrier layer is smaller than a distance between the first barrier layer and the well layer.
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Total number of triples: 40.