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publicationDate 2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10896735-B2
titleOfInvention Semiconductor memory device
abstract According to one embodiment, a semiconductor memory device includes: a memory cell array including a first memory cell, a first word line, a first circuit coupled to the first word line, a first driver used for a write operation and a read operation, a second driver used for an erase operation, and a voltage generator. The first circuit includes: a second circuit capable of electrically coupling the first word line and a first interconnect; a third circuit capable of electrically coupling the first interconnect and a second interconnect; a fourth circuit capable of electrically coupling the second interconnect and the first driver in the write and read operations; and a fifth circuit capable of electrically coupling the second interconnect and the second driver in the erase operation.
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