| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02A50-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T137-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2259-804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D2258-0216 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F23G7-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D53-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F23G7-06 |
| filingDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30b882adfec0e955451c96a72c8fa84f |
| publicationDate |
2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10894229-B2 |
| titleOfInvention |
Ozone abatement method for semiconductor manufacturing system |
| abstract |
An apparatus and method for abating ozone and reducing sulfuric acid from an exhaust stream. In a semiconductor manufacturing plant the processing of wafers involves the cleaning and etching of wafers, the resultant processing may produce gasses which must be abated. The apparatus and method utilizes UV light in high doses to convert ozone (O3) to oxygen (O2). By ensuring laminar flow through the UV light chambers, the efficiency of the system is sufficient to allow for the remaining impurities in the exhaust air to be removed through the use of an RTO. |
| priorityDate |
2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |