| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baeebdca3686fb192eddeaad0197e905
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b1a9815764f9fc4e295759de4ef5c5e |
| publicationDate |
2020-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10879116-B2 |
| titleOfInvention |
Method for copper plating through silicon vias using wet wafer back contact |
| abstract |
A method and apparatus for processing a substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer. |
| priorityDate |
2013-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |