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filingDate 2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10867815-B2
titleOfInvention Photonically tuned etchant reactivity for wet etching
abstract A method and a system for etching of semiconductor substrates, and particularly, wet etching of wafers. The etch rate of liquid solutions applied on the wafer is adjusted by irradiating the liquid solutions with spatially varied light intensity. Photo-reactive agents are added to the liquid solutions, the agents including photo acids, photo bases and photo-oxidizers. Illumination of the photo-reactive agents causes increase/decrease of the pH value and oxidation potential value of the liquid solutions.
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