| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2019-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d501f6184a1dd6b0b5dd3e7282aa7a71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd4b3bec3c3705aa80c27c68f67494c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b47ca89802610057c35ff062be58ba |
| publicationDate |
2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10854707-B2 |
| titleOfInvention |
Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layer |
| abstract |
A semiconductor device according to an embodiment includes a first electrode, a dielectric layer structure disposed on the first electrode and having a ferroelectric layer and a non-ferroelectric layer, and a second electrode disposed on the dielectric structure. The ferroelectric layer has positive and negative coercive electric fields having different absolute values. The dielectric structure has a non-ferroelectric property. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021376154-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11765887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532746-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021358694-A1 |
| priorityDate |
2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |