| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88f6119845609835b613468307fb4a5a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0006 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K101-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K103-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-03 |
| filingDate |
2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0165585753b4c7074f36e0be3ed1c5dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_990c4c158ad6ba47d32a68ac84183834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dce3646cc2cf33c207e9408b3d9d6a6a |
| publicationDate |
2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10854457-B2 |
| titleOfInvention |
Implanted dopant activation for wide bandgap semiconductor electronics |
| abstract |
An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a III-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature T1 under an applied pressure P1 for a time t1. While the heating of the sample is maintained, the sample is subjected to a series of rapid laser irradiations under an applied pressure P2 and a baseline temperature T2. Each of the laser irradiations heats the sample to a temperature Tmax above its thermodynamic stability limit. After a predetermined number of temperature pulses or a predetermined period of time, the laser irradiations are stopped and the sample is brought to a temperature T3 and held at T3 for a time t3 to complete the annealing. |
| priorityDate |
2018-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |