http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10847375-B2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3346 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate | 2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6901a38784a523357c59be738b71cac8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3380901ded55f099892ab8aee6607451 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c0c34b4cd371a72d500cf1d26928ee8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b27f061ca5477550bbe6bec986cf2b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff5fb5ff29d6e89b989bca9fc087e2e0 |
publicationDate | 2020-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-10847375-B2 |
titleOfInvention | Selective atomic layer etching |
abstract | A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas. |
priorityDate | 2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.