| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10677 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d469e7a12e78ae3c56d4e08b0cdef4ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89b01281ac87b5b3e0ef3f96f4e4181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96ce915e37ee06bc793a50197ea5e091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de62f8d9ac05a88e9421baf65a88ab1d |
| publicationDate |
2020-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10840082-B2 |
| titleOfInvention |
Method to clean SnO2 film from chamber |
| abstract |
A method for cleaning SnO2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of 1%-60% into a plasma processing system. The SnO2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH4 gas. The SnH4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of 1%-60% reduces a rate of SnH4 gas decomposition into Sn powder. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022258216-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11717866-B2 |
| priorityDate |
2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |