| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d3010c76b9d3c07cc9d73181ba28739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d259b865390527410f2e2865d310b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d |
| publicationDate |
2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10833187-B2 |
| titleOfInvention |
Low resistance contact interlayer for semiconductor devices |
| abstract |
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type material is formed on or in the p-doped layer. The n-type material includes an oxide of a II-VI material. An oxygen scavenging interlayer is formed on the n-type material. An aluminum contact is formed in direct contact with the oxygen scavenging interlayer to form an electronic device. |
| priorityDate |
2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |