| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
| filingDate |
2013-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01509a0ea23dd0d1de6e851d5f882306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a449f055d54fced6908691cff2b68f9a |
| publicationDate |
2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10833128-B2 |
| titleOfInvention |
Reducing junction leakage and occurrence of dark current at a contact portion of a solid-state image device |
| abstract |
There is provided a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021193714-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11715748-B2 |
| priorityDate |
2012-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |