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filingDate 2018-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10832905-B2
titleOfInvention Process of forming silicon nitride (SiN) film and semiconductor device providing SiN film
abstract A low pressure chemical vapor deposition (LPCVD) technique for nitride semiconductor materials includes steps of: setting a temperature in a furnace to be 750 to 900° C.; substituting an atmosphere in the furnace to ammonia (NH3); depositing a SiN film at an initial pressure by supplying di-chloro-silane (SiH2Cl2); and subsequently depositing the SiN film at a deposition pressure that is higher than the initial pressure. The invention has a feature that the initial pressure is at least higher than 60% of the deposition pressure.
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