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filingDate 2019-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10832775-B1
titleOfInvention Cross-point array of polymer junctions with individually-programmed conductances that can be reset
abstract Memory devices are provided having a cross-point array of polymer junctions with individually-programmed conductances that can be reset. In one aspect, a memory device is provided. The memory device includes: bottom metal lines; top metal lines; and polymer junctions in between the bottom metal lines and the top metal lines, wherein the polymer junctions include an organic polymer doped with a spiropyran and an acid. A method of forming and a method of operating the memory device are also provided.
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