| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2018-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe6ecfbd2375f6827c4daf8b7d645025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9708d5cdbf720d37cb94c1f5e5cc65aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c871888b68c886c8f8a3b46db897a93c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d694c70b2a2aec4e0465153f5ab6a088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8685aa1b602daed9263b2d4e5ed67630
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3742e251fffbb474719dbbe85740c13 |
| publicationDate |
2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10825907-B2 |
| titleOfInvention |
Self-aligned contact and manufacturing method thereof |
| abstract |
A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate electrode such that an outermost width of the contact decreases as the contact extends away from the source/drain region. |
| priorityDate |
2016-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |