| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53c911e75ea09dd4c2705db5306dae77 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02 |
| filingDate |
2019-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_728cc3afbe6b2ad2785dde3b3ded4765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba747dc35bce7430672dc71c49eecd35 |
| publicationDate |
2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10825729-B2 |
| titleOfInvention |
Method for producing an integrated circuit, integrated circuit, x-ray detector and x-ray device |
| abstract |
A method is for producing an integrated circuit. In an embodiment, a metallic contact structure, for a through silicon via with a contact area, is applied onto a silicon substrate without an insulating intermediate layer. An interconnection structure, with at least one insulating layer and at least one interconnection layer, is applied onto the silicon substrate. The contact structure is or will be contacted with the interconnection layer or at least one of the possibly plurality of interconnection layers, and a diode structure for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate is introduced into the silicon substrate. |
| priorityDate |
2018-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |