| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11524
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524 |
| filingDate |
2017-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8952d35982fb9bda9e5e87ce5ebcc7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58558f6f94c1b07b59a48d64ca6825a2 |
| publicationDate |
2020-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10825681-B2 |
| titleOfInvention |
3D CTF integration using hybrid charge trap layer of sin and self aligned SiGe nanodot |
| abstract |
Provided are an improved memory device and a method of manufacturing the same. In one embodiment, the memory device may include a vertical stack of alternating oxide layer and nitride layer, the vertical stack having a channel region formed therethrough, a plurality of nanostructures selectively formed on nitride layer of the vertical stack, and a gate oxide layer disposed on exposed surfaces of the channel region, the gate oxide layer encapsulating the plurality of nanostructures formed on the nitride layer. The nanostructures may be a group IV semiconductor compound such as silicon germanium (SiGe). |
| priorityDate |
2016-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |