| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38af66c0d2d4bbb62f28fd6a4f027254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e126a36de2ca8d7ae7ee333a39295495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9b0ed5c62cb9c10030aa1e961f620f |
| publicationDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10804371-B2 |
| titleOfInvention |
Structure and formation method of semiconductor device with gate stack |
| abstract |
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first gate electrode over the semiconductor substrate. The semiconductor device also includes a first gate dielectric layer between the first gate electrode and the semiconductor substrate. The semiconductor device further includes a second gate electrode over the semiconductor substrate. The second gate electrode has an upper portion and a lower portion between the upper portion and the semiconductor substrate, and the upper portion is wider than the lower portion. In addition, the semiconductor device includes a second gate dielectric layer between the second gate electrode and the semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302581-B2 |
| priorityDate |
2014-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |