| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11553 |
| classificationCPCInventive |
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| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11553
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11526
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1158 |
| filingDate |
2019-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b93389fb44e0db9a4291ffdd1de29952
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c02572981ba2bfb0272532e9bee3d429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38186f603b236b5cf68056e00c9b3729
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2299a025a2aed6b0c65d5bff46b62bc |
| publicationDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10804291-B1 |
| titleOfInvention |
Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same |
| abstract |
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a single crystalline semiconductor layer, a single crystal epitaxial source semiconductor layer located between the single crystalline semiconductor layer and the alternating stack and epitaxially aligned to the single crystalline semiconductor layer, and a memory stack structure vertically extending through the alternating stack and containing a memory film and an epitaxial vertical semiconductor channel including a single crystal semiconductor material that is epitaxially aligned to the epitaxial source semiconductor layer at an interface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482539-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022367501-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022238547-A1 |
| priorityDate |
2019-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |