| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7f0a9e7f8fa5fa2464cbbd0a8fd510
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69d681846777a24d968487af396a688a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8fbf590463d3518a746d90a6a2c1c34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74 |
| filingDate |
2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc2c2e987ba2cf28d84703625a94ea0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_383f24b183f709d8cbf8c2e0f8305071 |
| publicationDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10804135-B1 |
| titleOfInvention |
Semiconductor structure and formation method thereof |
| abstract |
A semiconductor structure and a formation method thereof are provided. The formation method includes: providing a base, a dummy gate structure being formed on the base, a source/drain doping region being formed in the base on both sides of the dummy gate structure, a dielectric layer being formed on the base exposed by the dummy gate structure, and the dielectric layer covering the source/drain doping region; etching the dielectric layer on both sides of the dummy gate structure to form a contact hole exposing the source/drain doping region; forming a contact plug in the contact hole, the contact plug being electrically connected to the source/drain doping region; after forming the contact plug, removing the dummy gate structure, and forming a gate opening in the dielectric layer; and forming a gate structure in the gate opening. Embodiments of the present disclosure are advantageous to simplify process complexity and increase process windows. |
| priorityDate |
2019-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |