Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23a4e0c875bf1ac2b8a3b76517de6c7d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N52-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10 |
filingDate |
2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ac59f5b4c41c37f1ad5dc0ed6cb88fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4673481ecef2159cc744f76efd32bfe0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52a8fd89588818dccd0655864d959850 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daa1646685765ccbee928ca3326e4ecd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f1d73cd4988f46b9256c0a40ff0917b |
publicationDate |
2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10790441-B2 |
titleOfInvention |
Spin-transfer-torque synthetic anti-ferromagnetic switching device |
abstract |
A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure. |
priorityDate |
2016-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |