| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-2406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0156 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-2493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L39-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0912
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-805 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N10-00 |
| filingDate |
2019-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b11a237a559e163f7fce3ec907dba811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0faa07ee3a8d9d3a854724456fcebb4 |
| publicationDate |
2020-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10790433-B2 |
| titleOfInvention |
Shadow mask sidewall tunnel junction for quantum computing |
| abstract |
A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed using a first shadow mask evaporation. A second conducting layer is formed on a portion of the first conducting layer, where the second conducting layer is formed using a second shadow mask evaporation. An oxide layer is formed on the first conducting layer and the second conducting layer. A third conducting layer is formed on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the third conducting layer. |
| priorityDate |
2017-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |