| abstract |
A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below:n condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B. |