Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2608 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate |
2019-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b898f4341206e345c3a5832f102775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35c12f42f8afcc737ec4b8aae5623051 |
publicationDate |
2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10748822-B2 |
titleOfInvention |
Method for manufacturing semiconductor device |
abstract |
A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value. |
priorityDate |
2017-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |