| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11524
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7abe207d69364991fd2fd0f5b7d662a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2299a025a2aed6b0c65d5bff46b62bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2442f78fc9835ecdbe086c06c1676c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b923f08d94bdbe402e83fbcea695b7c3 |
| publicationDate |
2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10741572-B2 |
| titleOfInvention |
Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same |
| abstract |
A memory stack structure including a memory film and a vertical semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulating layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulating layers, a backside blocking dielectric layer may be formed in the backside recesses and sidewalls of the memory stack structures. A metallic barrier material portion can be formed in each backside recess. A metallic material portion is formed on the metallic barrier material portion. Subsequently, a metal portion comprising a material selected from cobalt and ruthenium is formed directly on a sidewall of the metallic barrier material portion and a sidewall of the metallic material portion and an overlying insulating surface and an underlying insulating surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11631695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11777005-B2 |
| priorityDate |
2015-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |