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filingDate 2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10734552-B2
titleOfInvention Semiconductor device having a light emitting structure
abstract An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.
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