Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
filingDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07377e537887070a577fc2069b9ba2ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c0177bb58a7fb40ea112cdad1fc162f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bf05e21b0ee75f46daa30c2f97c0522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c63b4690ce55b5518d32eeeefb602f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa5761ef5bd31db1acfe2d726c88beb |
publicationDate |
2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10734552-B2 |
titleOfInvention |
Semiconductor device having a light emitting structure |
abstract |
An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10. |
priorityDate |
2016-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |