| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-063 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N3-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate |
2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dce47eb6932fa56b7d1ab8fad62751ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c31ac78394568dea434cbc69f28a69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3c9365ac185348d99c5460aa0b0e23 |
| publicationDate |
2020-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10734447-B2 |
| titleOfInvention |
Field-effect transistor unit cells for neural networks with differential weights |
| abstract |
Techniques regarding FET 1T2R unit cells are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a first resistive random-access memory unit operably coupled to a field-effect transistor by a first extrinsic semiconductor layer. The system can also comprise a second resistive random-access memory unit operably coupled to the field-effect transistor by a second extrinsic semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020365698-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879308-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069784-B2 |
| priorityDate |
2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |