| abstract |
Provided is a method of fabricating an integrated circuit device, the method including: forming, on a substrate, a developable bottom anti-reflective coating (DBARC) layer including a chemically amplified polymer; forming, on the DBARC layer, a photoresist layer including a non-chemically amplified resin and a photoacid generator (PAG); generating an acid from the PAG in a first region selected from the photoresist layer, by exposing the first region; diffusing the acid in the exposed first region into a first DBARC region of the DBARC layer, the first DBARC region facing the first region; and removing the first region and the first DBARC region by developing the photoresist layer and the DBARC layer. |