| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7854 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0663f2fa2efb0354f48dac8d33f4d95d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61cd158d8bc62452a491ac2148e1fe94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3e74ddeb36c1a037887b191479f2eed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286e44f2f3027351d17b7c9cd2cffe64 |
| publicationDate |
2020-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10720503-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
A semiconductor device includes a semiconductor substrate, a first fin structure and a second fin structure. The first fin structure includes a first fin and at least two first nano wires disposed above the first fin, and the first fin protrudes from the semiconductor substrate. The second fin structure includes a second fin and at least two second nano wires disposed above the second fin, and the second fin protrudes from the semiconductor substrate. Each first nano wire has a first width different from a second width of each second nano wire. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164941-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11694901-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022037363-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021343544-A1 |
| priorityDate |
2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |