Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb89d5e2d1cbc7cb60855ce53480a740 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90232432b1b2a1f0cdb01aa84d55af9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_888bf566a40c41db8955127fd1def57c |
publicationDate |
2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10714596-B2 |
titleOfInvention |
Directional deposition of protection layer |
abstract |
A method for forming a fin device includes forming semiconductor fins over a first dielectric layer. A second dielectric layer is directionally deposited into or on the first dielectric layer and on tops of the fins on horizontal surfaces. The second dielectric layer is configured to protect the first dielectric layer in subsequent processing. Sidewalls of the fins are precleaned while the first dielectric layer is protected by the second dielectric layer. The second dielectric layer is removed to expose the first dielectric layer in a protected state. |
priorityDate |
2016-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |