Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-056 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2018-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9b0ed5c62cb9c10030aa1e961f620f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68298e8e373a8c0ab442b9ee65fd5848 |
publicationDate |
2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10714581-B2 |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A Fin FET semiconductor device includes a fin structure extending in a first direction and extending from an isolation insulating layer. The Fin FET device also includes a gate stack including a gate electrode layer, a gate dielectric layer, side wall insulating layers disposed at both sides of the gate electrode layer, and interlayer dielectric layers disposed at both sides of the side wall insulating layers. The gate stack is disposed over the isolation insulating layer, covers a portion of the fin structure, and extends in a second direction perpendicular to the first direction. A recess is formed in an upper surface of the isolation insulating layer not covered by the side wall insulating layers and the interlayer dielectric layers. At least part of the gate electrode layer and the gate dielectric layer fill the recess. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020020794-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114566-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742395-B2 |
priorityDate |
2015-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |