| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2017-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c6f430b1af8bd9094ce23ba468cb69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bc61ceaa3fbd5c91aa7f0d01c6f4525 |
| publicationDate |
2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10707316-B2 |
| titleOfInvention |
Structure and formation method of semiconductor device structure with gate structure |
| abstract |
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a dielectric layer over the substrate, a first metal gate structure in the dielectric layer and having a first width and a second metal gate structure in the dielectric layer and having a second width. The first metal gate structure includes a first metal electrode, and the second metal gate structure includes a second metal electrode. The second metal electrode includes a first conductive portion having a third width and a second conductive portion over the first conductive portion and having a fourth width. The fourth width is greater than the third width. The semiconductor device structure also includes two first source/drain portions at opposite sides of the first metal gate structure, and two second source/drain portions at opposite sides of the second metal gate structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022336606-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600709-B2 |
| priorityDate |
2016-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |