| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81851e105df9f5a9ad2b0a7c2783bcc0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2019-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45db1e70530aeabda4deee8b7a3ab3fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ecfec3df01a0e4e0d67638b6b22f72b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c09d6fd83bbdc3b42a1e2dca89f5b2f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a962522c70028526975952ac746143c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57b032a1dc03c4ce05aa5d0d6eb0db3c |
| publicationDate |
2020-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10707120-B1 |
| titleOfInvention |
SOI devices with air gaps and stressing layers |
| abstract |
An RF SOI device combines a triple-layer stressing stack and patterned low-k features (i.e., low-k polymer structures and/or air gap regions) disposed in pre-metal dielectric over the gate structures of NMOS transistors. The triple-layer stressing stack includes a thick SiN or oxynitride lower stressor layer that applies tensile stress in the channel regions of the NMOS transistors, a thin intermediate buffer layer, an upper etch-stop layer. After Metal-1 processing is completed, a special etching process is performed to define air gaps in the pre-metal dielectric over the NMOS gate structures using upper layer(s) of the triple-layer stressing stack as an etch stop to prevent damage to the stressor layer. A non-conformal dielectric material or an optional low-k dielectric material is then deposited in or over the air gaps to complete formation of the low-k features, and an optional capping or sealing layer is formed over the completed low-k features. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021217652-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289365-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11205609-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3859777-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022068766-A1 |
| priorityDate |
2019-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |