| abstract |
Devices and methods are provided to fabricate multi-threshold voltage gate-all-around field-effect transistor devices (e.g., nanosheet field-effect transistor devices) wherein threshold voltage tuning is achieved by adjusting a channel spacing between active channel layers of the gate-all-around field-effect transistor devices in different device regions, and forming common high-k dielectric/metal gate structures for the gate-all-around field-effect transistor devices to achieve different thickness combinations of common work function metal layers in different channel spacings between active channel layers of the gate-all-around field-effect transistor devices. |