| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c7f0a9e7f8fa5fa2464cbbd0a8fd510
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8fbf590463d3518a746d90a6a2c1c34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69d681846777a24d968487af396a688a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2019-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e76eb8bd4a2c5c01005621216e5f415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57a6bcf929142ef12f83151dd3fafa6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d1755f9b18cceb08fe537cb496f5618 |
| publicationDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10685838-B1 |
| titleOfInvention |
Semiconductor structure providing for an increased pattern density on a substrate and method for forming same |
| abstract |
Disclosed are a semiconductor structure and a method for forming the same. The method includes: providing a base, including a first region and a second region, where a pitch between target patterns formed on the first region is greater than a pitch between target patterns formed on the second region; forming a bottom core material layer on the base; forming first core layers on the bottom core material layer; forming a first mask sidewall on a sidewall of the first core layer of the first region, and forming a second mask sidewall on a sidewall of the first core layer of the second region, where the thickness of the second mask sidewall is greater than the thickness of the first mask sidewall; removing the first core layers; patterning the bottom core material layer by using the first mask sidewall and the second mask sidewall as masks, to form a second core layer; removing the first mask sidewall and the second mask sidewall; forming a third mask sidewall on a sidewall of the second core layer; removing the second core layer; and patterning the base by using the third mask sidewall as a mask, to form target patterns protruding out of a residual base. The present disclosure meets the requirement of different pitches of the target patterns. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113078117-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021366714-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417526-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022102154-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11664234-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11640910-B2 |
| priorityDate |
2018-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |