| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-21 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2017-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd98cbfb1b8d5dc23809b3a28186a01b |
| publicationDate |
2020-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10665459-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
Included herein are, a step of forming an active region for a semiconductor device on a front surface of a SiC substrate, a step of forming a SiC substrate-to-drain electrode bonding region on a back surface of the SiC substrate by grinding it using an abrasive whose average abrasive grain size is within a specified range, a step of depositing a film of a first drain electrode on the SiC substrate-to-drain electrode bonding region, a step of electrically connecting the first drain electrode with the SiC substrate-to-drain electrode bonding region, and a step of depositing a film of a second drain electrode on the first drain electrode, so that a SiC semiconductor device having a high mechanical strength with a reduced energization loss is achieved. |
| priorityDate |
2016-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |