| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2018-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_754ac5ff4dce5bec6b9ea4b85cb49465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce43afad60ba12c0ab65a161bf03a5c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7839291c2b8d923d0aadb06edddeaf5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d530bb12b1f1ee3e9d88a91610816e4 |
| publicationDate |
2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10658176-B2 |
| titleOfInvention |
Methods of mitigating cobalt diffusion in contact structures and the resulting devices |
| abstract |
One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer. |
| priorityDate |
2018-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |