Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0292 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-128 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
filingDate |
2016-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_686c830a3283d1faf6a849b3ef1914c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e86b249592f64ec09d1539dd9a445b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8565e0e9c1a711ce86562e0ca406b3b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e191fc4e185900a2b5fe00969de93468 |
publicationDate |
2020-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10640368-B2 |
titleOfInvention |
Semiconductor sensor and method of manufacturing the same |
abstract |
A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11588095-B2 |
priorityDate |
2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |