| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate |
2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07377e537887070a577fc2069b9ba2ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c63b4690ce55b5518d32eeeefb602f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bf05e21b0ee75f46daa30c2f97c0522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa5761ef5bd31db1acfe2d726c88beb |
| publicationDate |
2020-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10636939-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part of the second recess and coming into contact with the second electrode. |
| priorityDate |
2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |