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filingDate 2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10636467-B2
titleOfInvention SOT-MRAM and method for writing data thereof
abstract A semiconductor device includes a line driving unit connected to a memory cell array, a switch unit including first and second output terminals electrically connected to the memory cell array through a plurality of bit lines and a plurality of source lines, and a power supply unit outputting a precharge voltage and a source voltage to the first and second output terminals. The power supply unit includes a negative voltage generation unit that charge-shares the precharge voltage to be charged with a first voltage and discharges the first voltage to one side to generate a negative voltage on the other side.
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