| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b79e2daa9f09442c392f3b1b2b36b89d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a50b0300c79a9e4d70de7f9e4bf2afc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa5248e46e7af7fed26ba085d304723a |
| publicationDate |
2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10629638-B2 |
| titleOfInvention |
LTPS layer, method for fabricating the same, display substrate and display device |
| abstract |
A method for fabricating a LTPS layer, a LTPS layer, a display substrate, and a display device are disclosed. The method includes providing a substrate which comprises a driver thin film transistor region and a non-driver thin film transistor region; depositing an amorphous silicon layer on the substrate; and irradiating the amorphous silicon layer with a laser beam to crystalline the amorphous silicon layer, wherein a scanning parameter with which the laser beam irradiates the amorphous silicon layer in the driver thin film transistor region is different from a scanning parameter with which the laser beam irradiates the amorphous silicon layer in the non-driver thin film transistor region. The driver and non-driver thin film transistor regions are processed in a differentiated manner with different scanning parameters. The amorphous silicon layer in the driver thin film transistor region is crystallized into a the grain size. |
| priorityDate |
2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |