| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2463 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
| filingDate |
2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45016b15097b154b7d78976c9716e09b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d99528a6b7430da9a5263d8689f01f0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0757a82bc9b98937c7c6a877f82e77d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e23aba62e94c92308b3d586ace373c34 |
| publicationDate |
2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10600656-B2 |
| titleOfInvention |
Directed self-assembly for copper patterning |
| abstract |
A process for forming patterned copper lines, a pattern of copper lines, and an electronic device having patterned copper lines and at least one CMOS circuit. The process includes assembling an etch stack, wherein the etch stack includes a resist and a copper substrate. The process also includes lithographically patterning the resist to produce a template, and forming a patterned block copolymer mask layer by directed self-assembly. Additionally, the process includes etching portions of the block copolymer mask layer to produce a patterned block copolymer mask layer, and transferring a pattern formed by the template and the patterned block copolymer mask layer to the copper substrate to form the patterned copper lines. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903270-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019123100-A1 |
| priorityDate |
2017-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |