| abstract |
A method for fabricating a semiconductor device integrating a multiple patterning scheme includes forming a plurality of mandrels from a base structure, forming a plurality of non-mandrels including a hard mask material having an etch property substantially similar to that of the plurality of mandrels, forming photo-sensitive material or a memorization layer over the plurality of mandrels and the plurality of non-mandrels, and applying an exposure scheme to the photo-sensitive material or the memorization layer to create at least one mandrel cut pattern and at least one non-mandrel cut pattern. |