http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10444182-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4167 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2017-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f913e76f226d6b953bd3a3993aaa0e9 |
| publicationDate | 2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10444182-B2 |
| titleOfInvention | Semiconductor device |
| abstract | According to one embodiment, a semiconductor device includes FET having a threshold changing according to a chemical state in a gate portion, a time-varying signal application section configured to apply a time-varying signal to at least one of a source, a drain and a back gate of the FET, and a signal reading section configured to read a change in the threshold of the FET resulting from the application of the time-varying signal as a signal. |
| priorityDate | 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.