Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2018-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_749d07bb8435f2f367bf42b3f1e666ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c666ecc35f0a1e4013f5b1a8453d6501 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bd16363f22eea10e4f9a18918ebc04b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6deb73ab9390e8aad0e6ed23bf026093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cfe2fce45522b52b8a9b04c66f8afb6 |
publicationDate |
2019-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10396157-B1 |
titleOfInvention |
Semiconductor device |
abstract |
A semiconductor device includes semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer. |
priorityDate |
2018-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |