| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ddb9f3656270bc5410be3679322fead |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-521 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747 |
| filingDate |
2018-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_325d0c194fd930f74eee6304248662b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d72005a3a202f3836f7ae725ad94fff3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7da297ed5f0f894964a67fda66330fd |
| publicationDate |
2019-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10388821-B2 |
| titleOfInvention |
Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module |
| abstract |
A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method. |
| priorityDate |
2015-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |