Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10891 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
filingDate |
2018-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d888b0d1f6fa15b9eb3a7447cc99a19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_733b2b83aea2658b52578203b70310b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d1067971be0beb48d40f4f191061970 |
publicationDate |
2019-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10381352-B1 |
titleOfInvention |
Integrated assemblies which include carbon-doped oxide, and methods of forming integrated assemblies |
abstract |
Some embodiments include an integrated assembly having semiconductor material structures which each have a transistor channel region, and which are over metal-containing structures. Carbon-doped oxide is adjacent regions of each of the semiconductor material structures and sidewalls of the metal-containing structures. Some embodiments include an integrated assembly having pillars of semiconductor material. Each of the pillars has four sidewalls. Two of the four sidewalls of each pillar are gated sidewalls. The other two of the four sidewalls are non-gated sidewalls. Carbon-doped silicon dioxide is adjacent and directly against the non-gated sidewalls. Some embodiments include a method of forming an integrated assembly. Rails of semiconductor material are formed. A layer of carbon-doped silicon dioxide is formed adjacent top surfaces and sidewall surfaces of each of the rails. Trenches are formed which slice the semiconductor material of the rails into pillars. Wordlines are formed within the trenches and along the pillars. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818667-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019348419-A1 |
priorityDate |
2018-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |