http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381303-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 |
| filingDate | 2016-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffb8daa90029240c8571146743b3ce48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877242335981b1f4d4397b84830da498 |
| publicationDate | 2019-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10381303-B2 |
| titleOfInvention | Semiconductor device structures |
| abstract | Semiconductor device structures are provided. The semiconductor device structures include a semiconductor substrate. The semiconductor device structures also include an inner metal layer disposed on the semiconductor substrate and a top metal layer disposed on the inner metal layer, wherein the top metal layer has a first portion and a second portion, and wherein the first portion completely covers the inner metal layer, the second portion surrounds the first portion, and the first portion is separated from the second portion. The semiconductor device structures further include a passivation layer disposed on the top metal layer, wherein the passivation layer has a hollowed pattern to expose the top metal layer. |
| priorityDate | 2016-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.