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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
filingDate 2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d4b0b3f9c8dc2704ea5965ee8881b92
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publicationDate 2019-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10371658-B2
titleOfInvention Gas sensor and sensor apparatus
abstract A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.
priorityDate 2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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