| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2033-0095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-3504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2014-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a163c9da7a54df2674228c952ff16b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f6be5beb15bed79f7ee7371d0236dde |
| publicationDate |
2019-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10371657-B2 |
| titleOfInvention |
Method for locating a wafer in the ingot of same |
| abstract |
A method for determining the original position of a wafer in an ingot made from semiconductor material comprises the following steps: measuring the interstitial oxygen concentration in an area of the wafer; measuring the concentration of thermal donors formed in said area of the wafer during a previous solidification of the ingot; determining the effective time of a thermal donor formation anneal undergone by the wafer when solidification of the ingot took place, from the thermal donor concentration and the interstitial oxygen concentration; and determining the original position of the wafer in the ingot from the effective time. |
| priorityDate |
2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |