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filingDate 2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10366997-B2
titleOfInvention Semiconductor devices and methods for manufacturing the same
abstract A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact.
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